Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 4. P. 403-405.

PACS: 73.30.+y

On a doped transition layer in the space charge region of Schottky contact
L.V. Shekhovtsov

Institute of Semiconductor Physics, NAS of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine
Phone: 38(044) 265 6272; fax: 38(044) 265 8342; e-mail: k208@photon.kiev.ua

Abstract. A technique is proposed for estimation of maximal thickness of a doped semiconductor transition layer in a Schottky contact. It is based on taking spectral curves of transverse photovoltage. It is shown that in gallium arsenide crystal with starting impurity concentration of 1016 cm-3, a layer with doping level of 1017 cm-3 and maximal thickness of 4 nm may exist in the space-charge region near the interface of the TiB2-GaAs structure. At impurity concentration in the transition layer about and over 1018 cm-3, its thickness goes down, and it shows up as individual inclusions in the GaAs lattice. The total area of such inclusions at the metal-semiconductor interface does not exceed 1 % that of contact. In actual structures the transition layer is a superposition of layers and inclusions, with impurity concentration of 1017 cm-3 or more and thickness below 4 nm.

Keywords: Schottky contact, transition layer, transverse photovoltage, space-charge region, depletion region.
Paper received 08.11.02; accepted for publication 17.12.02.

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