Semiconductor Physics, Quantum Electronics & Optoelectronics, 5 (4), P. 412-416 (2002)
https://doi.org/10.15407/spqeo5.04.412 Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 4. P. 412-416. PACS: 68.55.-a, 68.60.-p, 75.50.-y, 75.70.-i, 81/15.-z, 81.30.-Kf Investigations of characteristics
of metal film based pyroelectric detectors implanted by Ar+ ions Taras Shevchenko Kyiv National University,
6 Glushkova prosp., 03127 Kyiv, Ukraine, Abstract. Functional parameters and characteristics of pyroelectric detectors based on the system thin metal film - thick pyroelectric substrate are investigated. Such metals as Ni, Mo and Ti were used to increase absorption of such systems. The pyroelectric substrates (LiNbO3 and LiTaO3) with thickness of 0.1 mm coated by metal films with thicknesses of 15-40 nm were investigated. Influence of ion implantation on functional characteristics (radiation stability, adhesion) of pyroelectric detectors developed on the base of such systems are shown. Application of such pyroelectric detectors to registration of power laser radiation is proposed. Keywords: pyroelectric
detector, ion implantation, thin metal film, spectral sensitivity. Download full text in PDF [PDF 98K< This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License. |