Semiconductor Physics, Quantum Electronics & Optoelectronics, 5 (4), P. 412-416 (2002)
https://doi.org/10.15407/spqeo5.04.412


Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 4. P. 412-416.

PACS: 68.55.-a, 68.60.-p, 75.50.-y, 75.70.-i, 81/15.-z, 81.30.-Kf

Investigations of characteristics of metal film based pyroelectric detectors implanted by Ar+ ions
V.O. Lysyuk, L.V. Poperenko, V.S. Staschuk

Taras Shevchenko Kyiv National University, 6 Glushkova prosp., 03127 Kyiv, Ukraine,
Phone: +38(044) 266 2296; fax +38(044) 266 4507; e-mail: lysiuk@mail.univ.kiev.ua, plv@phys.univ.kiev.ua

Abstract. Functional parameters and characteristics of pyroelectric detectors based on the system thin metal film - thick pyroelectric substrate are investigated. Such metals as Ni, Mo and Ti were used to increase absorption of such systems. The pyroelectric substrates (LiNbO3 and LiTaO3) with thickness of 0.1 mm coated by metal films with thicknesses of 15-40 nm were investigated. Influence of ion implantation on functional characteristics (radiation stability, adhesion) of pyroelectric detectors developed on the base of such systems are shown. Application of such pyroelectric detectors to registration of power laser radiation is proposed.

Keywords: pyroelectric detector, ion implantation, thin metal film, spectral sensitivity.
Paper received 14.03.02; revised manuscript received 03.12.02; accepted for publication 17.12.02.

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