Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 4. P. 420-424.

PACS: 78.60.Kn, 78.55.Hx, 42.70.Hj, 71.55.Ht

Growth conditions influence on thermally stimulated luminescence of sapphire single crystals
I.V. Blonskyy1, A.Yu. Vakhnin1, A.Ya. Danko2, A.K. Kadashchuk1, V.N. Kadan1, N.S. Sidelnikova2, V.M. Puzikov2, Yu.A.Skryshevskii1

1 Institute of Physics, NAS of Ukraine, 46 prospect Nauky, 03028 Kyiv, Ukraine
Phone: 265 3138; e-mail: blon@iop.kiev.ua
2 Institute of single crystals, NAS of Ukraine, 60 prospect Lenina, 61001 Kharkov, Ukraine
Phone: (0572) 30 7485; e-mail: root@isc.kharkov.com

Abstract. The results of investigation of thermally stimulated and photoluminescence as well as absorption spectra of a-sapphire grown by a technique of horizontally directed crystallization in a protective gas medium of varying composition and pressure are presented. This technique has an advantage of minimization of W and Mo erosion, thus providing a considerably reduced prime cost. At the same time, there are some problems connected with emergence of considerable number of anion vacancies, whose in-axis concentration gradient is directed oppositely to that of dopants (mainly Ti). The correlations are found between the conditions of -sapphire growing and the data of absorption and luminescent spectroscopy. An interaction between the anion vacancies and Ti dopants, which induces a transition from electric-charge state Ti4+ to Ti3+, is discussed.

Keywords: sapphire, thermally stimulated luminescence, titanium dopant, anion vacancy, absorption, photoluminescence.
Paper received 23.07.02; accepted for publication 17.12.02.

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