https://doi.org/10.15407/spqeo5.04.428
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 4. P. 428-430.
PACS: 42.65.Pc
Modified optical OR and AND gates
Avireni Srinivasulu
Department of Communication Technology,
Defence University Engineering College,
Post Box No. 1771, 1110 Addis Ababa, Ethiopia
E-mail: avireni_s@yahoo.com
Abstract. This paper deals with optical OR and AND gate, using unijunction transistor (UJT), light emitting diode (LED), and photo-resistor (LDR). Effort is made to extend the development of the gates using UJT, LDR, and LED to work at 1.8 Vdc instead of 3 Vdc. The power dissipation is approximately 2 mW. These optical gates find application in the field of instrumentation, optical logic isolators, and fiber optics systems where intrinsic safety is of prime importance rather than speed of operation.
Keywords: bistability,
intrinsic safety, low speed.
Paper received 24.10.02; accepted for publication
17.12.02
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