https://doi.org/10.15407/spqeo5.04.457
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 4. P. 457-464.
PACS: 73.40.Ns, 73.30.+y
Evolution of structural
and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing
V.L. Litvinov1,
K.D. Demakov1,
O.A. Agueev2,
A.M. Svetlichny2,
R.V. Konakova3,
P.M. Lytvyn3,
O.S. Lytvyn3,
V.V. Milenin3
1Scientific & Research Center of Information
Technologies "Kurchatov Institute", 123182 Moscow, Russia
2Taganrog State Radio Engineering University, Taganrog GSP-17A, Rostov
Region, Russia
3Institute of Semiconductor Physics, NAS of Ukraine, 45 prospect Nauky,
03028 Kyiv, Ukraine
Phone: +38(044) 265 5940; fax: +38(044) 265 8342; e-mail: plyt@isp.kiev.ua
Abstract. Using X-ray phase analysis, Auger electron spectroscopy and atomic force
microscopy, we investigated structural-phase transformations in the Ni/n-21R-SiC
system induced by rapid thermal annealing in a vacuum (pressure of 10-2
Pa) in the 450-1100 °Ñ temperature range. It was found that modification
of contact I-V curves from barrier-type to ohmic is due to appearance
of local contact areas with different barrier heights (among them areas
with ohmic conduction). Generation of the above nonuniformities results
from intense heterodiffusion of the system components, as well as formation
and recrystallization of various nickel silicide phases (differing in
stoichiometry) and degradation of planar uniformity of both interface
and Ni film.
Keywords: Ni/SiC
contact, Schottky barrier, nickel silicides, rapid thermal annealing (RTA),
X-ray phase analysis, Auger analysis, atomic force microscopy.
Paper received 15.11.02; accepted for publication
17.12.02.
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