Semiconductor Physics, Quantum Electronics and Optoelectronics, 5 (4) P. 449-452 (2002).
References
1. R.V. Konakova, Yu.A. Tkhorik, V.I. Faynberg, E.A. Soloviev, F. Štofanik, Diagnostics of semiconductor devices from their electric, photoelectric and pulse characteristics using the complex "Capron" // Optoelektronika i Poluprovodnikovaya Tekhnika No 18, pp. 35-46. (1990) (in Russian).
2. L.S. Yu, D. Qiao, L. Jia, S.S.Lau, Y. Qi, K.M. Lau, Study of Schottky barrier of Ni on p-GaN // Appl. Phys. Lett. 79(27),pp. 4536-4538 (2001). https://doi.org/10.1063/1.1428773
3. Q. Chen, J.W. Yang, M. Blasingame, C. Faber, A.T. Ping, I.Adesida, Microwave electronics device applications of AlGaN/GaN heterostructures // Mater. Sci. & Eng. B59, pp. 395-400(1999). https://doi.org/10.1016/S0921-5107(98)00356-0
4. C.A. Dimitriadis, Th. Karakostas, S. Logothetidis, G.Kamarinos, J. Brini, G. Nouet, Contacts of titanium nitride to n- and p-type gallium nitride films // Solid-St. Electron. 43,pp. 1969-1972 (1999). https://doi.org/10.1016/S0038-1101(99)00153-7
5. Advanced Test Equipment // www.atecorp.com
6. V.N. Petrov, M.N. Petrov, An automated meter of static parameters of semiconductor devices // Izmeritel'naya Tekhnika No 12, pp. 49-52 (1996) (in Russian).
7. V.T. Kremen, An automated meter of parameters of semiconductor devices // Izmeritel'naya Tekhnika No 9, pp. 31-34(1998) (in Russian).
8. R.V. Konakova, E.A. Soloviev, O.E. Rengevich, Facilities and techniques for diagnostics of microwave diodes and transistors, in 7th Intern. Crimean Conf. "Microwave & Telecommunication Technology", Conf. Proc., Sevastopol, Weber Co.,pp. 282-283 (1997) (in Russian).
9. I.Yu. Il'in, R.V. Konakova, O.E. Rengevich, E.A. Soloviev, A measuring module and software for test rig to check FET parameters // Izvestiya Vuzov. Elektronika No 4, pp. 101-104(1998) (in Russian).
10. O.E. Rengevich, Effect of g-radiation and microwave radiation on the SB-FET parameters, Author's Abstract of the Candidate of Tekhnical Sci. Thesis, Kiev, Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine, 2001 (in Russian).
11. N.A. Charykov, M.L. Belousov, M.V. Perevozchikov, Yu.V. Oreshnikov, V.N. Danilin, T.A. Zhukova, A programmable computer complex for determination of contact resistance to gallium nitride and related materials, in Abstracts of the All-Russia Conf. "Gallium, indium and aluminum nitrides - structures and devices", Moscow, 1-2 November 2001, p. 17 (in Russian).
12. F. Draghici, F. Mitu, G. Dilimot, I. Enache, Method to increase the thermal stability of the heating circuits, in CAS'98 Proc. (1998 Int. Semicond. Conf., Sinaia, Romania), 2, pp.501-504 (1998).
13. V.T. Kremen, A wide-range temperature regulating device with automatic setting for regulated object // Pribory I Tekhnika Eksperimenta No 5, pp. 158-160 (1998) (in Russian).
14. O.E. Rengevich, Radiation effects in HEMTs // Pis'ma v ZhTF 25(25), pp. 55-58 (1999) (in Russian). https://doi.org/10.1134/1.1262465