https://doi.org/10.15407/spqeo5.04.449
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 4. P. 449-452.
PACS: 85.30
A universal automated complex
for control and diagnostics of semiconductor devices and structures
R.V. Konakova, O.E. Rengevych, A.M. Kurakin,
Ya.Ya. Kudryk
Institute of Semiconductor Physics, NAS
Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine
Phone: 38(044) 265 6182; fax: 38(044) 265 8342; e-mail: konakova@isp.kiev.ua
Abstract. We present a universal automated complex for control and diagnostics.
It is intended to measure static, pulse and capacitance-voltage characteristics
of two- and three-terminal networks, both at room temperature and in 77-1000
K temperature range. A distinguishing feature of complex construction
is the possibility for simulation of interrelation between parameters
of the objects studied. The complex has been tested when studying the
effect of g- and microwave
radiations on parameters of gallium arsenide SB-FETs, GaN-based HEMTs
and silicon carbide SBDs.
Keywords: diagnostics
of semiconductor devices, automation of measurements.
Paper received 31.07.02; accepted for publication
17.12.02.
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