Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 4. P. 431-436.

PACS: 61.72.Bb; 61.72.Ji; 61.72.Yx

Classification of microdefects in semiconducting silicon
V.I. Talanin, I.E. Talanin*

Zaporozhye Institute of State & Municipal Government, 70B, Zhukovskii str., 69002 Zaporozhye,
E-mail: V.I.Talanin@mail.ru
*Zaporozhye State Engineering Academy, 226, pr. Lenin, 69006 Zaporozhye, Fax: +380 (612) 601498

Abstract. On the basis of experimental analysis (preferential etching, transmission electron microscopy) of the dislocation-free silicon single crystals grown by floating-zone method (FZ-Si) and Czochralski method (Cz-Si), a classification of grown-in microdefects was compiled. The suggested classification is founded on the heterogeneous formation mechanism of grown-in microdefects, which was justified earlier by us. The suggested classification is valid for crystals of either small or large diameter.

Keywords: microdefects, silicon, interstitial-type, vacancy-type.
Paper received 26.09.03; accepted for publication 11.12.03.

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