Stress-induced effects in light scattering by plasmons in p-type germanium V.N. Poroshin, A.V. Gaydar, A.A. Abramov, V.N. Tulupenko
Semiconductor physics, quantum electronics and optoelectronics, 6 (4), P. 425-430 (2003).
The microdefects classification in semiconducting silicon V.I. Talanin, I.E. Talanin
Semiconductor physics, quantum electronics and optoelectronics, 6 (4), P. 431-436 (2003).
Metastable interstitials in CdSe and CdS crystals L.V. Borkovska, B.M. Bulakh, L.Yu. Khomenkova, N.O. Korsunska, I.V. Markevich
Semiconductor physics, quantum electronics and optoelectronics, 6 (4), P. 437-440 (2003).
On the origin of the 300 K near-band-edge luminescence in CdTe K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk
Semiconductor physics, quantum electronics and optoelectronics, 6 (4), P. 441-443 (2003).
High-temperature injection spectroscopy of deep traps in CdTe polycrystal films A.S. Opanasyuk, N.N. Opanasyuk, N.V. Tirkusova
Semiconductor physics, quantum electronics and optoelectronics, 6 (4), P. 444-449 (2003).
Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures O.Ya. Olikh
Semiconductor physics, quantum electronics and optoelectronics, 6 (4), P. 450-453 (2003).
Atomic defects and physical-chemical properties of PbTe-InTe solid solutions D.M. Freik, V.I. Boychuk, L.I. Mezhylovsjk
Semiconductor physics, quantum electronics and optoelectronics, 6 (4), P. 454-457 (2003).
Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions Z.D. Kovalyuk, V.P. Makhniy, O.I. Yanchuk
Semiconductor physics, quantum electronics and optoelectronics, 6 (4), P. 458-460 (2003).
Unipolar injection currents in Bi4Ge3O12 crystals T.M. Bochkova, S.N. Plyaka, G.Ch. Sokolyanskii
Semiconductor physics, quantum electronics and optoelectronics, 6 (4), P. 461-464 (2003).
Thermally stimulated luminescence studies of undoped and doped CaB4O7 compounds J. Manam, S.K. Sharma
Semiconductor physics, quantum electronics and optoelectronics, 6 (4), P. 465-470 (2003).
Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate E.B. Kaganovich, I.M. Kizyak, S.I. Kirillova, R.V. Konakova, O.S. Lytvyn, P.M. Lytvyn, E.G. Manoilov, V.E. Primachenko, I.V. Prokopenko
Semiconductor physics, quantum electronics and optoelectronics, 6 (4), P. 471-478 (2003).
Structural changes in the multilayer systems containing InxGa1–xAs1–yNy quantum wells I.M. Fodchuk, V.B. Gevyk, O.G. Gimchinsky, E.N. Kislovskii, O.P. Kroytor, V.B. Molodkin, S.I. Olihovskii, E.M. Pavelescu, M. Pessa
Semiconductor physics, quantum electronics and optoelectronics, 6 (4), P. 479-486 (2003).
A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures A.V. Sachenko, Yu.V. Kryuchenko, E.G. Manoilov, E.B. Kaganovich
Semiconductor physics, quantum electronics and optoelectronics, 6 (4), P. 487-491 (2003).
Structure and luminescence study of nanoporous silicon layers with high internal surface V.A. Makara, M.M. Melnichenko, K.V. Svezhentsova, L.Yu. Khomenkova, O.M. Shmyryeva
Semiconductor physics, quantum electronics and optoelectronics, 6 (4), P. 492-495 (2003).
Optical properties of ZnO aggregates in KBr matrix M. Samah, M. Bouguerra, H. Khelfane
Semiconductor physics, quantum electronics and optoelectronics, 6 (4), P. 496-498 (2003).
Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics S.O. Kanevsky, P.G. Litovchenko, V.Ja. Opilat, V.P. Tartachnyk, M.B. Pinkovs’ka, O.P. Shakhov, V.M. Shapar
Semiconductor physics, quantum electronics and optoelectronics, 6 (4), P. 499-504 (2003).
Polymer films as a sensitive coating for quartz crystal microbalance sensors array I.A. Koshets, Z.I. Kazantseva, Yu. M. Shirshov
Semiconductor physics, quantum electronics and optoelectronics, 6 (4), P. 505-507 (2003).
Modeling high performance multilayer antireflection coatings for visible and infrared (3–5m) substrates M.H. Asghar, M.B. Khan, S. Naseem
Semiconductor physics, quantum electronics and optoelectronics, 6 (4), P. 508-513 (2003).
Influence of elastic deformation on a residual ellipticity of polished optical materials V.P. Maslov, A.Z. Sarsembaeva, F.F. Sizov
Semiconductor physics, quantum electronics and optoelectronics, 6 (4), P. 514-516 (2003).
Distortion compensation technique for high resolution microscopy V.N. Borovytsky
Semiconductor physics, quantum electronics and optoelectronics, 6 (4), P. 517-519 (2003).
The study of the lifetime of ZnS-based luminescent films by using the devices of LMS series K. Popovych, Yu. Nakonechny, I. Rubish, V. Gerasimov, G. Leising
Semiconductor physics, quantum electronics and optoelectronics, 6 (4), P. 520-523 (2003).
Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure K.C. Aw, K. Ibrahim
Semiconductor physics, quantum electronics and optoelectronics, 6 (4), P. 524-527 (2003).
Vacuum method for creation of liquid crystal orienting microrelief Yu. Kolomzarov, P. Oleksenko, V. Sorokin, P. Tytarenko, R. Zelinskyy
Semiconductor physics, quantum electronics and optoelectronics, 6 (4), P. 528-532 (2003).
