https://doi.org/10.15407/spqeo6.04.454
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 4. P. 454-457.
PACS: 64.90+b
Atomic defects and physical-chemical properties
of PbTe-InTe solid solutions
D.M. Freik, V.I. Boychuk, L.I. Mezhylovsjka
Vasyl Stefanyk Precarpathian University, 57, Shevchenko str., 76000 Ivano-Frankivsk, Ukraine,
E-mail: freik@pu.if.ua
Abstract. Crystal-quasichemical equations of probable mechanisms inherent to formation of
solid solutions based on lead telluride of the n-type in PbTe-InTe system are offered. Shown
is the possibility to satisfactorily explain experimental results by filling with indium atoms
(up to 3 mol. % InTe) octahedral hollows (IH) of close-packed arrangement
of tellurium atoms in PbTe crystal lattice. At the greater content of indium telluride, the
allocation of both In+1 on OH, and In+3 on tetrahedral hollows (TH), accordingly, takes
place.
Keywords: lead telluride, indium telluride, solid solution, atomic defects, crystal-quasichemical
reaction.
Paper received 16.07.03; accepted for publication 11.12.03.
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