https://doi.org/10.15407/spqeo6.04.458
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 4. P. 458-460.
PACS: 73.40.-c
Mechanisms of forward current transport
in p-GaSe-n-InSe heterojunctions
Z.D. Kovalyuk, V.P. Makhniy*, O.I. Yanchuk
Chernivtsi Department of Institute of Materials Sciences Problems National Academy of Sciences of Ukraine,
5, Iryna Vilde str., 58001 Chernivtsi, Ukraine, E-mail: chimsp&unicom.cv.ua, yanchuka@mail.ru,
* Chernivtsi National University by Yuriy Fedkovich, 2, Kotsyubinsky str., 58012 Chernivtsi, Ukraine
Abstract. Voltage-current characteristics forwardly biased heterojunctions p-GaSe-n-InSe made
by the method of optical contact are analyzed. Asit was ascertained, the forward current is
determined by tunnel-recombination processes at low voltages and overbarrier emission. The
experimental characteristics are defined by the known theoretical expressions for anisotipical
heterojunctions with the energy diagram by Andersen.
Keywords: heterijunction, voltage-current characteristic, current transport, gallium and indium
monoselenides.
Paper received 17.07.03; accepted for publication 11.12.03.
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