Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 4. P. 461-464.

PACS: 72.20 Iv

Unipolar injection currents in Bi4Ge3O12 crystals
T.M. Bochkova, S.N. Plyaka, G.Ch. Sokolyanskii

Dniepropetrovsk National University, 13, Naukova str., 49050 Dniepropetrovsk, Ukraine
Phone: +380 (562) 465597; E-mail: tbochkova@ff.dsu.dp.ua

Abstract. Current-voltage characteristics of bismuth orthogermanate (Bi4Ge3O12) single crystals have been measured at different temperatures under conditions of unipolar injection of charge carriers. It has been found that conduction is characterized by the existence of two channels of the percolation. The temperature dependencies of the conductivity, mobility and concentration of the electrons and holes are considered. The obtained results are discussed in terms of hopping transport model of charge carriers in doped heavily compensated semiconductors.

Keywords: hopping conductivity, current-voltage relations, bismuth orthogermanate.
Paper received 08.09.03; accepted for publication 11.12.03.

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