Semiconductor Physics, Quantum Electronics & Optoelectronics, 6 (4), P. 465-470 (2003)
https://doi.org/10.15407/spqeo6.04.465 Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 4. P. 465-470. PACS: 78.60.Kn, 61.10.Nz Thermally stimulated luminescence studies
of undoped and doped CaB4O7 compounds Department of Applied Physics, Indian School of Mines, Dhanbad-826004, India Abstract. Thermoluminescence of undoped and doped CaB4O7 with activators such as Cu and
Mn has been investigated. The polycrystalline samples of undoped and doped CaB4O7 are
prepared by melting method. The formation of CaB4O7 compound is checked by X-ray diffraction
study and the compound is found to have orthorhombic structure at room temperature.
The TSL studies of undoped CaB4O7 sample shows two glow peaks at 150°C and 265°C
and one shoulder at around 190°C. The TSL studies of Cu doped CaB4O7 sample also shows
two glow peaks at 160°C and 270°C and a shoulder at around 230°C whereas the TSL glow
curves of Mn doped CaB4O7 has only one single strong glow peak at 135°C. A comparative
TSL studies of these compounds shows that CaB4O7 compound doped with Mn is the most
sensitive and the TSL intensity is enhanced by about 40 times when compared with the TSL
intensity of undoped CaB4O7 compound. The trap parameters namely order of kinetics (b),
activation energy (E) and frequency factor (s) associated with the 135°C glow peak of CaB4O7: Keywords: Calcium borate, X-ray diffraction, thermally stimulated luminescence, trap parameters. Download full text in PDF
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