Semiconductor Physics, Quantum Electronics & Optoelectronics, 6 (4), P. 465-470 (2003)
https://doi.org/10.15407/spqeo6.04.465


Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 4. P. 465-470.

PACS: 78.60.Kn, 61.10.Nz

Thermally stimulated luminescence studies of undoped and doped CaB4O7 compounds
J. Manam*, S.K. Sharma

Department of Applied Physics, Indian School of Mines, Dhanbad-826004, India
*Corresponding author: Phone: +91 326 2202671, Fax: +91 326 2210028, E-mail: jairam_manam@yahoo.co.in

Abstract. Thermoluminescence of undoped and doped CaB4O7 with activators such as Cu and Mn has been investigated. The polycrystalline samples of undoped and doped CaB4O7 are prepared by melting method. The formation of CaB4O7 compound is checked by X-ray diffraction study and the compound is found to have orthorhombic structure at room temperature. The TSL studies of undoped CaB4O7 sample shows two glow peaks at 150°C and 265°C and one shoulder at around 190°C. The TSL studies of Cu doped CaB4O7 sample also shows two glow peaks at 160°C and 270°C and a shoulder at around 230°C whereas the TSL glow curves of Mn doped CaB4O7 has only one single strong glow peak at 135°C. A comparative TSL studies of these compounds shows that CaB4O7 compound doped with Mn is the most sensitive and the TSL intensity is enhanced by about 40 times when compared with the TSL intensity of undoped CaB4O7 compound. The trap parameters namely order of kinetics (b), activation energy (E) and frequency factor (s) associated with the 135°C glow peak of CaB4O7:
Mn phosphor are determined using isothermal decay and glow curve shape (Chen's) methods.

Keywords: Calcium borate, X-ray diffraction, thermally stimulated luminescence, trap parameters.
Paper received 08.09.03; accepted for publication 11.12.03.

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