Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 4. P. 479-486.

PACS: 68.65.Fg

Structural changes in multilayer systems containing InxGa1-xAs1-yNy quantum wells
I.M. Fodchuk, V.B. Gevyk, O.G. Gimchinsky, E.N. Kislovskii*, O.P. Kroytor, V.B. Molodkin*, S.I. Olihovskii*, E.M. Pavelescu**, M. Pessa**

Yu. Fedkovich Chernivtsi national university, Chernivtsi
*G.V. Kurdyumov Institute for Metal Physics, NAS of the Ukraine, Kyiv
** Optoelectronics Research Centre, Tampere university of Technology, Tampere, Finland

Abstract. The investigations of multilayer nano-scale systems contained one or two quantum wells are carried out by double-crystal X-ray diffractometry. Processes of interdiffusion of In, Ga atoms and their influence on properties of such systems are considered. The content of nitrogen in quantum wells and buffer layers are defined. It is determined that InxGa1-xAs1-yNy system has perfect crystalline structure, and interface between layers is coherent.

Keywords: lattice matching, rocking curves, interdiffusion, superlattices.
Paper received 19.09.03; accepted for publication 11.12.03.

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