Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 4. P. 487-491.

PACS: 73.20.Dx, 78.66.-w

A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures
A.V. Sachenko, Yu.V. Kryuchenko, E.G. Manoilov, E.B. Kaganovich

V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine
Phone: +380 (44) 2656391, E-mail: div47@isp.kiev.ua

Abstract. To understand both multimodal character of stationary photoluminescence (PL) spectra and observed peculiarities in time-resolved PL in low-dimensional Si structures, it is proposed to take into account an additional effect, which has to emerge in such structures due to indirect-bandgap nature of silicon material. The effect implies that the exciton radiative lifetime becomes a nonmonotonous (oscillating) function of the nanocrystal (NC) size. As a result, in the calculated PL spectra the energy distance between PL peaks or PL minima practically determined by the mean NC size, while dispersion in NC sizes plays a minor role. The qualitative agreement between calculated PL spectra and PL spectra observed experimentally in porous silicon and nanocrystalline silicon (nc-Si) films counts in favor of the used
model of radiative exciton recombination.

Keywords: exciton transitions, silicon nanocrystals, quantum size effect, radiative recombination time, photoluminescence, time-resolved spectroscopy.
Paper received 10.11.03; accepted for publication 11.12.03.

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