Semiconductor Physics, Quantum Electronics & Optoelectronics, 6 (4), P. 496-498 (2003)
https://doi.org/10.15407/spqeo6.04.496


Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 4. P. 496-498.

PACS: 81.07.Bc

Optical properties of ZnO aggregates in KBr matrix
M. Samah*, M. Bouguerra, H. Khelfane

Departement de Physique, Groupe de Physique du solide (GPS), Laboratoire de Physique Theorique (LPT), Universite de Bejaia.
*Corresponding author, Departement de Physique, Universite A/Mira de Bejaia, 06000, Algerie, e-mail: madanisamah@yahoo.fr

Abstract. Zinc oxide nanocrystals were prepared, using Czochralski method of growth, in KBr matrix during pulling. Good evidences can prove that the quantum confinement effect is the special quality for this nanosystem. As an indication of quantum confinement effect, excellent emissions from band edge have been observed in optical absorption spectra and on selective PL ones. CL spectrum exhibits several levels in band gap allotted to different types of impurities in matrix and within ZnO aggregates.

Keywords: quantum confinement effect, zinc oxide, nanocrystals, exciton.
Paper received 26.04.03; revised manuscript received 11.10.03; accepted for publication 11.12.03.

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