Semiconductor Physics, Quantum Electronics & Optoelectronics, 6 (4), P. 520-523 (2003)
https://doi.org/10.15407/spqeo6.04.520


Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 4. P. 520-523.

PACS: 78.06.F; 78.66.Hf

The study of the lifetime of ZnS-based luminescent films by using the devices of LMS series
K. Popovych, Yu. Nakonechny and I. Rubish
Uzhgorod National University, Physical Department, 34, Pidhirna str., 88003 Uzhgorod, Ukraine
V. Gerasimov
Mukachevo Technological Institute, Technological Department, 26, Uzhgorodska str., 89600 Mukachevo, Ukraine,
Fax: +380 (3131) 21109; E-mail: vitge@mti.edu.ua

G. Leising
Institut fur Festkorperphysik, Technische Universitat Graz, Petersgasse 16, A-8010 Graz, Austria,
Phone: 43316 8738470; E-mail: g.leising@tugraz.at

Abstract. The development of the device to measure the lifetime of ZnS luminescent films with different dopants has been presented. The devices have been designed to operate under semiautomatic ( LMS 01) and program mode (LMS 02) of measuring the parameters of films with
setting the input ones. The data are transmitted to a computer and processed by a specialized program that, in its turn, controls the operation of the device, on the whole.

Keywords: thin film, device, luminescence, ZnS, intensity of light.
Paper received 08.09.03; accepted for publication 11.12.03.

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