Semiconductor Physics, Quantum Electronics and Optoelectronics, 6 (4) P. 425-430 (2003).

References

1. G.L. Bir, G.E. Pikus. Symmetry and strain-induced effects in semiconductors. Eds. J.Wiley&Sons, New York-Toronto(1974).
2. P.I.Baranskii, V.P.Klochkov, I.V.Potikevich. Semiconductor Electronics. Naukova Dumka, Kiev (1975).
3. S. Riskaer, L. Balslev, Interband piezo-birefringence in germanium // Phys. Lett. 21(1), pp. 16-18 (1966).
https://doi.org/10.1016/0031-9163(66)91320-5
4. R.B. James, D.L. Smith, Effect of unixial stress on the saturation of intervalÂnce-band absorption in p-type Ge // Phys.Rev. B28(2) pp. 586-592 (1983).
https://doi.org/10.1103/PhysRevB.28.586
5. S.M. Kelso, Energy- and stress-dependent hole masses in germanium and silicon // Phys.Rev.25B(2), pp. 1116-1125(1982).
https://doi.org/10.1103/PhysRevB.25.1116
6. E.V. Bakhanova, F.T.Vasko Dielectric constant of uniaxially compressed semiconductor with degenerate bands // Sov.Phys. Semicond. 21(6), pp.1068-1074 (1987).
7. E.V. Bakhanova, F.T. Vasko, Effect of crystal anisotropy on infrared hole transitions in uniaxially compressed semiconductors // Phys. stat.sol.(b), 182(1) pp. 97-107 (1994).
https://doi.org/10.1002/pssb.2221820110
8. E.V. Bakhanova, F.T. Vasko, Infrared Raman scattering in uniaxially compressed semiconductors // Solid State Commun.76(8) pp. 981-984 (1990).
https://doi.org/10.1016/0038-1098(90)90068-M
9. A.V.Gaydar, V.N.Poroshin, Light scattering by plasmons in p-type germanium // Ukr. Fiz. Zh. 47(9) pp. 862-866 (2002).
10. A.V.Gaydar, V.N.Poroshin, O.G.Sarbey, F.T.Vasko, Infrared light scattering by free holes in p-Ge // Semicond. Sci.Technol.9(10), pp.1790-1794 (1994).
https://doi.org/10.1088/0268-1242/9/10/006
11. A. Dargys, J. Kundrotas, Handbook on physical properties of Ge, Si, GaAs, and InP, Science and Encyclopedia Publishers, Vilnius (1994).
12. V.N. Poroshin, A.V.Gaydar, Infrared Raman scattering by free holes in uniaxially compressed p-Ge // Ukr. Fiz. Zh.48(5), pp.411-416 (2003).
13. G.A Abstreiter, M. Cardona, A. Pinczuk . Light Scattering in Solids, Eds. Springer-Verlag, Berlin-Heidelberg-New York-Tokio (1984).
14. I.V. Altukhov, M.S. Kagan, K.A. Korolev, V.N.Sinis,Intracenter inversion as a reason for the stimulated emission in uniaxially strained p-type germanium // JETP Letters.59(7), pp. 476-479 (1994).
15. A.T. Dalakyan , V.N. Tulupenko, D.A. Firsov, V.M. Bondar, On resonance states in split germanium // JETP Letters.69(9), pp. 676-681 (1999).
https://doi.org/10.1134/1.568074
16. M.A. Odnoblyudov, I.N. Yassievich, V.M. Chistyakov, K.A.Chao, Resonant states induced by shallow acceptors in uniaxially strained semiconductors // Phys.Rev. 62(4).pp. 2486-2494 (2000)
https://doi.org/10.1103/PhysRevB.62.2486
17. A.A. Abramov, V.N. Poroshin, V.N. Tulupenko, Resonantimpurity scattering in uniaxially stressed p-Ge // Ukr. Fiz.Zh. 47(10), pp. 964-966 (2002).
18. M.A. Odnoblyudov, A.A. Pahomov, V.M. Chistyakov, I.N.Yassievich, Resonant acceptor states in uniaxially compressed semiconductors // Sov. Phys. Semicond. 31(10),pp. 1180-1186 (1997).
https://doi.org/10.1134/1.1187016
19. I.N. Yassievich, A.A Prokofuev, M.A. Odnoblyudov Resonant states and terahertz emission // Izvestiya RAN, ser. Fis.65(2), pp. 240-242 (2001).