Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 4. P. 425-430.

PACS: 78.40. Fy, 73.20. Mf

Stress-induced effects in light scattering by plasmons in p-type germanium
V.N. Poroshin, A.V. Gaydar, A.A. Abramov*, V.N. Tulupenko*

Institute of Physics, NAS of Ukraine, 46 prospect Nauki, 03028 Kyiv, Ukraine
Fax: +380 (44) 2651589, E-mail: poroshin@iop.kiev.ua
*Donbass State Machine-building Academy, 72 Shkadinov Str., 84313 Kramatorsk, Ukraine
E-mail: tvn@laser.donetsk.ua

Abstract. Infrared light scattering by plasmons in p-Ge has been studied under uniaxial stress along the [110] axis with polarization of incident light parallel to the stress direction. It is found that the deformation of the crystal results in an increase of the plasma frequency and lowering the asymmetry of the line by plasma scattering. These effects are explained by taking into account the change of contribution to the dielectric constant caused by the intra- and intersubband transitions as a consequence of variation of the energy band of p-Ge related with deformation.

Keywords: light scattering, plasmon, plasma frequency, stress, dielectric constant, germanium.
Paper received 13.10.03; accepted for publication 11.12.03.

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