Semiconductor Physics, Quantum Electronics and Optoelectronics, 6 (4) P. 441-443 (2003).
References
1. N.C.Giles-Taylor, R.N.Bicknell, D.K.Blanks et al. Photoluminescence of CdTe: A comparison of bulk and epitaxial material // J.Vac.Sci.Technol., A3(1), pp. 76-82 (1985). https://doi.org/10.1116/1.573250
2. D.J.Olego, J.P.Faurie, S.Sivananthan, P.M.Raccah. Optoelectronic properties of Cd1-xZnxTe films grown from molecular-beam epitaxy on GaAs substrates // Appl. Phys. Lett., 47(11), 1172-1174 (1985). https://doi.org/10.1063/1.96316
3. N.C.Giles, J.Lee, D.Rajavel, C.J.Sommers. Photoluminescence of n-type CdTe:I grown by molecular beam epitaxy // J.Appl.Phys., 73(9), pp.4541-4545 (1993). https://doi.org/10.1063/1.352798
4. J.Lee, N.C.Giles, D.Rajavel, C.J.Sommers. Room temperature band-edge photoluminescence from cadmium telluride // Phys.Rev. B, 49(3), pp.1668-1676 (1994). https://doi.org/10.1103/PhysRevB.49.1668
5. D.E.Cooper, J.Bajaj, P.R.Neuman. Photoluminescence spectroscopy of excitons for evaluation of high-quality CdTe crystals // J.Crystal Growth, 86(1-4), pp. 544-551 (1988). https://doi.org/10.1016/0022-0248(90)90773-E
6. H.Zimmermann, R.Boyn, C.Michel, P.Rudolph. Absorptioncalibrated determination of impurity concentrations in CdTe from excitonic photoluminescence // Phys.Stat.Sol.(a), 118(1), pp. 225-234 (1990). https://doi.org/10.1002/pssa.2211180127
7. T.Schmidt, K.Lischka, W.Zulehner. Excitation-power dependence of the near-band-edge photoluminescence in semiconductors // Phys.Rev.B., 45(16), pp.8989-8994 (1992). https://doi.org/10.1103/PhysRevB.45.8989
9. S.H.Song, J.F.Wang, G.M.Lalev et al. Photoluminescence characterization of Cd-annealing effects on high-purity CdTe single crystals // J.Crystal.Growth., 252(1), pp.102-106 (2003). https://doi.org/10.1016/S0022-0248(03)00879-0
10. E.Grilli, M.Guzzi, L.Pavesi. High-precision determination of the temperature dependence of the fundamental energy gap in gallium arsenide // Phys.Rev.B., 45(4), pp.1638-1644 (1992). https://doi.org/10.1103/PhysRevB.45.1638
11. E.L.Nolle. On recombination via exciton states in semiconductors // Fizika tverdogo tela, 9(1), pp.122-128 (1967).
12. V.P. Gribkovsky. A theory of light absorption and emission in semiconductors. Nauka i Technika, Minsk (1975) (in Russian).
13. A.V.Sachenko, Yu.V.Kryuchenko. Excitonic effects in bandedge luminescence of semiconductors at room temperatures // Semicond. Phys., Quant.Electr., Optoelectronics, 3(2), pp.150-156 (2000). https://doi.org/10.15407/spqeo3.02.150
14. H.B.Bebb, E.W.Williams. Photoluminescence I: theory // in: Semiconductors and Semimetals (ed.by R.K.Willardson, A.C.Beer, Academic Press, N.Y. and London), v.8, pp.182-320 (1972). https://doi.org/10.1016/S0080-8784(08)62345-5