Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 4. P. 441-443.

PACS: 78.55.-m ; 78.55. Et

On the origin of 300 K near-band-edge luminescence in CdTe
K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauki, 03028 Kyiv, Ukraine
Phone : +380 (44) 2656373, fax: +380 (44) 2653337 (K.D. Glinchuk), E-mail: strilchuk@isp.kiev.ua

Abstract. A careful analysis of 300 K near-band-edge luminescence from bulk CdTe and cadmium telluride films is made. It is shown that: (i) the observed difference in 300 K peak positions of the near-band-edge luminescence hvm in CdTe crystals and films, and (ii) the hvm shift to lower energies as the excitation intensity is increased, could not be satisfactory explained by an assumption that free excitons dominate in the formation of the above luminescence. So, the origin of 300 K near-band-edge luminescence in CdTe is not mainly the free exciton one as was proposed earlier, and needs further examination.

Keywords: 300 K near-band-edge luminescence, CdTe crystals and films, free excitons, emission intensities, exciton-phonon coupling.
Paper received 02.10.03; accepted for publication 11.12.03.

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