Semiconductor Physics, Quantum Electronics and Optoelectronics, 6 (4) P. 450-453 (2003).
References
1. F.P. Korshunov, Yu.V. Bogatirev, V.¿. Vavilov, The radiation influence on integrated circuits, Nauka, Minsk (1986)(in Russian).
2. V.V. Kozlovskii, V.A. Kozlov, V.N. Lomasov, Modification of Semiconductors with Proton Beams. A Review // Semiconductors, 34(2), p. 123-144 (2000). https://doi.org/10.1134/1.1187921
3. B.N. Zaveryukhin, N.N. Zaveryukhina, R.A. Muminov, O.M.Tursunkulov, Alternating-Strain-Induced Drift of Nonequilibrium Charge Carriers in GaAs Photodetectors // Technical Physics Letters, 28(3), p. 207-210 (2002). https://doi.org/10.1134/1.1467277
4. Œ.Ya. Olikh, I.V. Ostrovskii Ultrasound-Stimulated Increase in the Electron Diffusion Length in p-Si Crystals // Physics of the Solid State, 44(7), p.1249-1253 (2002). https://doi.org/10.1134/1.1494617
5. N.S. Boltovets, A.B. Kamalov, E.Yu. Kolyadina, R.V. Konakova, P.M. Lytvyn, O.S. Lytvyn, L.A. Matveeva, V.V. Milenin, O.E. Rengelovych, Microwave-Stimulated Relaxation of Internal Strain in GaAs-Based Device Heterostructures // Technical Physics Letters, 28(2), p. 154-156 (2002). https://doi.org/10.1134/1.1458520
6. Yu.Yu. Bacherikov, R.V. Konakova, A.N. Kocherov, P.M. Lytvyn, O.S. Lytvyn, O.B. Ohrimenko, A.M. Svetlichnyi, Effect of Microwave Annealing on Silicon Dioxide/Silicon Carbide Structures // Technical Physics, 48(5), p. 598-601(2003). https://doi.org/10.1134/1.1576474
7. ¿.¿. Belyaev, ¿.≈. Belyaev, I.B. Ermolovich, S.M. Komirenko, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Solovíev, M.V. Shevelev, Influence of microwave treatment on the electrophysical characteristics of technically important semiconductors and surface-barrier structures // Technical Physics, 43(12), p. 1445-1449 (1998). https://doi.org/10.1134/1.1259222
8. I.V. Ostrovskii, S.V. Saiko, The GaAs surface state spectroscopy by acoustoelectric effect // Fizika Tverdogo Tela,35(4), p. 1043-1050 (1993).
9. I.V. Ostrovskii, O.Ya. Olikh, Characterization of interface deep levels in as vapor grown epi-GaAs // Solid State Communication, 107(7), . 341-343 (1998). https://doi.org/10.1016/S0038-1098(98)00236-1
10. ¿.V. Rjanov, The energy spectra of surface state and the kinetics of impulse field effect // Fizika i Tekhnika Poluprovodnikov, 6(8), p. 1495-1501 (1972).
11. F.S. Shishiyanu, Diffusion and degradation into semiconductor materials and devices, Shtiintsa, Kishinev (1978) (in Russian).
12. Yu. Vaitkus, Yu. Storasta, ¿. Pintsevichus, Ã. Pjatrauskas,V. Kazjukauskas, The semiisolate GaAs deep level parameters definition by fotoconductivity relaxation after laser excitation // Litovskii fizicheskii sbornic, 28(6), p. 744-751(1988).
13. V.Ya. Samoilov, N.¿. Yakusheva, V.Ya. Prints, The isovalent Sb impurity influence on arising of electric activity centers in liquid grown epi-n-GaAs // Fizika i Tekhnika Poluprovodnikov, 28(9), p. 1617-1626 (1994).
14. Õ. Zohm, E. Kasper, P. Mehringer, G.A. Muller, Thermal processing of silicon wafers with microwave co-heating // Microelectronic Engineering, 54, p. 247-253 (2000). https://doi.org/10.1016/S0167-9317(00)00413-5