https://doi.org/10.15407/spqeo6.04.450
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 4. P. 450-453.
PACS: 72.50.+b
Acoustoelectric transient spectroscopy
of microwave treated GaAs-based structures
O.Ya. Olikh
Kyiv Taras Shevchenko National University, Physics Faculty, 6, pr. Glushkova, 03127 Kyiv, Ukraine,
Phone: +380 (44) 2660510, A-mail: olikh@mail.univ.kiev.ua
Abstract. The effects of microwave (2.45 GHz) treatment influence on the cross section for
electron capture and the energy of the deep levels in the forbidden gap of GaAs monocrystals
and n-n+ epitaxial structures have been investigated using acoustoelectric transient spectroscopy.
Keywords: microwave treatment, deep level, gallium arsenide.
Paper received 30.07.03; accepted for publication 11.12.03.
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