Semiconductor Physics, Quantum Electronics & Optoelectronics, 7 (4), P. 333-338 (2004)
https://doi.org/10.15407/spqeo7.04.333


PACS: 63.2D.-e, 72.10.Di, 73.21.Cd

Effects of LO-phonon confinement on electron mobility in GaAs-Al0.45 Ga0.55As superlattice
D. Abouelaoualim

L.P.S.C.M, Physics Department, Faculty of Sciences-Semlalia
BP: 2390, 40000, Marrakech, Morocco
E-mail: abouelaoualim_d@hotmail.com

Abstract. The parallel and perpendicular electron mobilities in a GaAs-Al0.45Ga0.55As superlattice have been calculated. The scattering of electrons by confined longitudinal optical phonons was taken into account. Using the quantum treatment, we offered the new wavefunction of electron miniband conduction in the superlattice as well as reformulation of the slab model for confined LO-phonon modes. An expression for the relaxation time was obtained. Our results show that the relaxation time depends significantly on the total energy of electrons. The effect of the band nonparabolicity on the relaxation time was analyzed. At 300 K, the calculated results reveal that the electron mobility is enhanced when the well width in the superlattice is equal to 45 A.

Keywords: phonon confinement, electron mobility, superlattice.
Manuscript received 20.07.04; revised manuscript received 23.11.04; accepted for
publication 16.12.0

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