Effects of LO-phonon confinement on electron mobility in GaAs-Al0.45 Ga0. 55As superlattice D. Abouelaoualim
Semiconductor physics, quantum electronics and optoelectronics, 7 (4), P. 333-338 (2004).
Galvanomagnetic phenomena in HgMnTe and HgCdMnTe single crystals S.E Ostapov, I.M. Rarenko, M.D. Tymochko
Semiconductor physics, quantum electronics and optoelectronics, 7 (4), P. 339-342 (2004).
All-optical signal processing in photonic structures with shifting bands. E.Ya. Glushko
Semiconductor physics, quantum electronics and optoelectronics, 7 (4), P. 343-349 (2004).
The change in optical characteristics of ZnO crystals under ruby laser irradiation I.V. Markevich, V.I. Kushnirenko, A. Baidullaeva, B.M. Bulakh, P.V. Pobirovskiy
Semiconductor physics, quantum electronics and optoelectronics, 7 (4), P. 350-354 (2004).
Designing bandpass filters in 8-14 for Si and Ge substrates M.H. Asghar, M.B. Khan, S. Naseem
Semiconductor physics, quantum electronics and optoelectronics, 7 (4), P. 355-359 (2004).
Electrical and photoelectrical properties of n -InSe/ p -CuInSe 2 optical contact Z.D. Kovalyuk, O.M. Sydor, V.V. Netyaga
Semiconductor physics, quantum electronics and optoelectronics, 7 (4), P. 360-362 (2004).
Obtaining heterostructures with quantum dots for sensors by using liquid phase epitaxy I.E. Maronchuk, A.M. D'yachenko, A.I. Minailov, V.V. Kurak, I.V. Chorny
Semiconductor physics, quantum electronics and optoelectronics, 7 (4), P. 363-367 (2004).
Active layer – semi-insulating substrate interface effect on GaAs MESFET components M. Belgat, N. Merabtine, M. Zaabat, C. Kenzai, Y. Saidi
Semiconductor physics, quantum electronics and optoelectronics, 7 (4), P. 368-371 (2004).
Research of structures with corrugated photoreceiving surface A.V. Karimov, D.M. Yodgorova
Semiconductor physics, quantum electronics and optoelectronics, 7 (4), P. 372-376 (2004).
Features of epitaxial layer growth of films from solutions based on indium and aluminum arsenides D.M . Yodgorova , A.V. Karimov
Semiconductor physics, quantum electronics and optoelectronics, 7 (4), P. 377-379 (2004).
Emission recombination in BiI3(Mn) and BiI3(Cr) layered single crystals F.V. Motsnyi, V.G. Dorogan
Semiconductor physics, quantum electronics and optoelectronics, 7 (4), P. 380-383 (2004).
Development and investigation of LC light shutters for automatic welding mask Yu. Kolomzarov, P. Oleksenko, V. Sorokin, P. Tytarenko, R. Zelinskyy
Semiconductor physics, quantum electronics and optoelectronics, 7 (4), P. 384-388 (2004).
Accurate numerical modelling of GaAs MESFET current-voltage characteristics N. Merabtine, S. Khemissi, M. Zaabat, M. Belgat, C. Kenzai
Semiconductor physics, quantum electronics and optoelectronics, 7 (4), P. 389-394 (2004).
Radiations effects on electronic circuits in a spatial environment N. Merabtine, M. Benslama, A. Benslama, Dj.Sadaoui
Semiconductor physics, quantum electronics and optoelectronics, 7 (4), P. 395-399 (2004).
Paramagnetic defects related to photoluminescence in SiOx films G.Yu. Rudko, I.P. Vorona, I.Z. Indutnyy, Ishchenko S.S., Shepeliavyi P.E., Yukhymchuk V.O.
Semiconductor physics, quantum electronics and optoelectronics, 7 (4), P. 400-403 (2004).
On the Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals Yu.I. Zhirko, I.P. Zharkov, Z.D. Kovalyuk, M.M. Pyrlja, V.B. Boledzyuk
Semiconductor physics, quantum electronics and optoelectronics, 7 (4), P. 404-410 (2004).
The enhancement of optical process near rough surface of metals G.I. Dovbeshko, O.M. Fesenko, Y U .M. Shirshov, V.I. Chegel
Semiconductor physics, quantum electronics and optoelectronics, 7 (4), P. 411-424 (2004).
Photoelectrical characteristics of two-dimensional macroporous silicon structures L.A. Karachevtseva, V.F. Onischenko, M.I. Karas', O.I. Dandur'yants, F.F. Sizov, O.J. Stronska
Semiconductor physics, quantum electronics and optoelectronics, 7 (4), P. 425-429 (2004).
Two-dimensional photonic crystals as perspective materials of modern nanoelectronics L.A. Karachevtseva
Semiconductor physics, quantum electronics and optoelectronics, 7 (4), P. 430-435 (2004).
Photoluminescence characterization of Al/Al2O3/InP MIS structures passivated by anodic oxidation A. Djelloul, A. Mahdjoub, H. Bouredoucen
Semiconductor physics, quantum electronics and optoelectronics, 7 (4), P. 436-440 (2004).
Spectra of the photo-electric phenomena physically differentiated on the absorption factor of the light L.I. Berezhinsky, E.F. Venger, I.E. Matyash, B.K. Serdega
Semiconductor physics, quantum electronics and optoelectronics, 7 (4), P. 441-445 (2004).
Recording of high efficiency diffraction gratings by He-Cd laser S . A . Kostyukevych , A . N . Morozovska , P . E . Shepeliavyi , O . O . Kudryavtsev , S . V . Dyrda , V . I . M inko , V . M . Rubish , V . V . Rubish , I . V . Tverdokhleb
Semiconductor physics, quantum electronics and optoelectronics, 7 (4), P. 446-451 (2004).
Chemical dynamic polishing of CdTe and CdxHg1-x Te single crystals by the solutions of the H2O2-HCl-tartaric acid system Z.F. Tomashik, E.M. Lukiyanchuk, V.M. Tomashik
Semiconductor physics, quantum electronics and optoelectronics, 7 (4), P. 452-455 (2004).
Optical and acoustical phonon modes in superlattices with SiGe QDs V.O. Yukhymchuk, V.M. Dzhagan, V.P. Klad'ko, O.S. Lytvyn, V.F. Machulin, M.Ya. Valakh, A.M. Yaremko
Semiconductor physics, quantum electronics and optoelectronics, 7 (4), P. 456-461 (2004).
Nano-size phase inclusions in As2S3glass, films and fibers based on it N. Mateleshko, V. Mitsa, A. Stronski, M. Veres, M. Koos, A.M. Andriesh
Semiconductor physics, quantum electronics and optoelectronics, 7 (4), P. 462-464 (2004).
Tunable high-finesse narrow bandpass Fabry-Perot filter V.B. Markov, A.I. Khizhnyak, V. Goren, W.B. Cook
Semiconductor physics, quantum electronics and optoelectronics, 7 (4), P. 465-473 (2004).
