PACS: 73.40.Lq

Electrical and photoelectrical properties of n-InSe/p-CuInSe2 optical contact
Z.D. Kovalyuk, O.M. Sydor, and V.V. Netyaga

Chernivtsi Department of the Institute of Materials Science Problems, NAS of Ukraine
5, Iryna Vilde Str., 58001 Chernivtsi, Ukraine
Phone: 8 (0372) 52-00-50
E-mail: chimsp@unicom.cv.ua

Abstract. Photosensitive heterojunctions were created by the method of optical contact of layered semiconductor InSe to CuInSe2 plates. Due to high quality of contacting surfaces, a strong and enough perfect electrical junction is formed. To understand processes occurring in such heterojunctions, the measurements of current-voltage characteristics in forward and reverse directions, photoelectric modification of the direct branch of the current-voltage characteristic, capacitance-voltage characteristic, spectrum of the relative quantum efficiency have been carried out at the room temperature. The structures had a well-pronounced photovoltaic effect – the open-circuit voltage was 0.5 V and the short-circuit current density – 0.7 mА/cm2. The conclusion about possibility of application of the obtained heterojunctions as photodetectors is made.

Keywords: СuInSe2, InSe, heterojunction, optical contact, current-voltage
characteristics, photovoltaic effect.

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