PACS: 73.40.Lq

Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy
I.E. Maronchuk1, A.M. D’yachenko2, A.I. Minailov1, V.V. Kurak1, I.V. Chorny1

1 Kherson State Technical University, 24, Berislavskoye Shosse, 73008 Kherson, Ukraine
E-mail: design@tlc.kherson.ua, andymin@selena.net.ua
2 Mechnikov Odessa National University, 2, Dvoryanskaya str., 65026 Odessa, Ukraine

Abstract. Peculiarities of the crystallization processes forming the structures with quantum dots (QD) by the method of pulse cooling of saturated solution-melt were considered. A theoretical model of QD formation was developed, and it was shown that sizes of experimentally obtained QDs are in good accordance with those theoretically calculated taking into account the Rehbinder effect and the process of nuclei increase. The STM-image and the photoluminescence spectra of the structures with InAs QD grown on GaAs substrate and also InSb quantum dots grown on GaSb substrate are represented.

Keywords: liquid phase epitaxy, quantum dots, nucleus, supersaturation, strain.

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