https://doi.org/10.15407/spqeo7.04.389
PACS: 85.30.Tv
Accurate numerical modelling the GaAs MESFET
current-voltage characteristics
N. Merabtine1, S. Khemissi2, M. Zaabat3, M. Belgat4, C. Kenzai4
1 Laboratoire Electromagnetisme et Telecommunication, Electronics Department, Faculty of Engineering,
University, Mentouri, Constantine, Algeria
E-mail: na_merabtine@hotmail.com
2 Departement de Seti, Faculte de technologie Universite de khenchla, Algeria
E-mail: saadekhemissi@yahoo.fr
3 Physics department, University of Oum-El-Bouaghi, Algeria
E-mail: Zaabat@hotmail.com
4 Laboratoire des Couches Minces et Interfaces, Departement de physique Faculte des Sciences, Universite
Mentouri de Constantine
E-mail: musbelgat@yahoo.fr
Abstract. In this paper, we present a computing model of the current-voltage (I-V) characteristics of a gallium arsenide Schottky barrier field effect transistor called GaAs MESFET. This physical model is based on the two-dimensional analysis of the Poisson equation in the active region under the gate. In this frame, we elaborated a simulation software based on analysis of expressions that we have previously set up [1-3], the obtained theoretical results are discussed and compared to the experimental ones.
Keywords: gallium arsenide, field effect transistor, Poisson equation.
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