PACS: 71.25.Rk, 81.60Cp

Photoelectrical characteristics of two-dimensional macroporous silicon structures
L.A. Karachevtseva, V.F. Onischenko, M.I. Karas’, O.I. Dandur’yants, F.F. Sizov, O.J. Stronska

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine
Phone: 38 (044) 525-98-15. Fax: 38 (044) 525-83-42
E-mail: lakar@isp.kiev.ua; sizov@isp.kiev.ua; stronska@isp.kiev.ua

Abstract. Photoelectrical properties of macroporous silicon structures were investigated in the near infrared spectral range (1 to 8 ?m). Angular dependences of photoconductivity, its amplification, realization of the single-mode optical regime, essential domination of the absorption over the light reflection by structures of macroporous silicon are explained by formation of the plasmon type surface polaritons. Photoconductivity bands correlate with maxima of intrinsic and impurity light absorption. The change in the photoconductivity value is mainly determined by the growth of the electron mobility.

Keywords: macroporous silicon structures, optical transmittance, photoelectrical characteristics.

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