Semiconductor Physics, Quantum Electronics & Optoelectronics, 7 (4), P. 446-451 (2004)
https://doi.org/10.15407/spqeo7.04.446


PACS:42.40.Eq, 42.70.Ln

Recording the high efficient diffraction gratings by using He-Cd laser
S.A. Kostyukevych1*, A.N. Morozovska1**, V.I. Minko1, P.E. Shepeliavyi1, A.A. Kudryavtsev1, V.M. Rubish2, V.V. Rubish2, I.V. Tverdokhleb2, A.S. Kostiukevych1,3, S.V. Dyrda4

1 V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kiev, Ukraine, *sekret@spie.org.ua, **morozo@i.com.ua
2 Uzhgorod National University, 54, Voloshina str., 88000 Uzhgorod, Ukraine
3 National Agricultural University, 03028 Kiev, Ukraine
4 Taras Shevchenko Kiev National University, 2, prospect Glushkova, 03127 Kiev, Ukraine

Abstract. High efficient holographic diffraction gratings with spatial frequencies from 600 to 3600 mm–1 have been recorded using As40S60–õSeõ (õ = 0, 10, 20) photoresist layers and He-Cd laser operating at the wavelength ? = 440 nm. The investigation of the grating relief made by atomic force microscopy revealed that As40S60–xSex resists allows one to record grating originals with profiles of various heights depending on the resist chemical composition, its etching and exposure times. We obtained typical spectral and angular dependences of the first order diffraction efficiency for the grating with the high modulation depth and groove profile close to the sinusoidal one. Comparing the recorded gratings with different spatial frequencies, exposure and etching times, we determined optimal recording conditions (exposure and etching times) in order to obtain gratings with the high diffraction efficiency.

Keywords: inorganic photoresist, selective etching, holographic diffraction gratings.

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