PACS: 81.65.Cf; 42.86.+b

Chemical dynamic polishing CdTe and CdxHg1–xTe single crystals by using solutions of H2O2–HCl–tartaric acid system
Z.F. Tomashik, E.M. Lukiyanchuk, V.M. Tomashik

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine Phone: +380 (44) 525 22 01

Abstract. Dissolution of CdTe and CdxHg1–xTe single crystals in solutions of H2O2– HCl–tartaric acid system has been studied. The surfaces of equal etching rates were constructed and the limiting stages of the dissolution process were ascertained. Also determined were the concentration limits for the solutions that can be used for chemical polishing the above-mentioned semiconductor materials.

Keywords: dissolution, etchant, cadmium telluride, solid solutions, semiconductor materials.

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