Semiconductor Physics, Quantum Electronics & Optoelectronics, 7 (4), P. 462-464 (2004)
https://doi.org/10.15407/spqeo7.04.462


PACS: 61.43.Dq; 78.30.Ly

Nano-sized phase inclusions in As2S3 glass, films and fibers based on this glass
N. Mateleshko1, V. Mitsa1, A. Stronski2, M. Veres3, M. Koos3, A.M. Andriesh4

1 Uzhgorod National University, 32, Voloshina str., Uzhgorod, Ukraine
E-mail: mitsa@univ.uzhgorod.ua
2 V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028, Ukraine
3 Academy of Sciences of Hungary, Institute of Solid State Physics and Optics
4 Academy of Sciences of Moldova

Abstract. In this report, the comparative analysis using Raman spectroscopy of the short-range order in amorphous As2S3 films deposited with different evaporation rates, volume glass and fiber based on this glass is presented. With increasing the film deposition rate, their structure becomes more non-uniform as compared to that of glass. Raman spectra excited by laser radiation with energy bigger than the width of the
optical gap indicate photomodification of the structure of As2S3 glass and fiber based on it.

Keywords: Raman spectra; As2S3 films, glass and fiber; nano-sized phase inclusions.

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