Semiconductor Physics, Quantum Electronics and Optoelectronics, 7 (4) P. 368-371 (2004).
References
1. K. Horio, Y. Fuseya, Two dimensional simulation of drain-curent transients in GaAs MESFET's with semi-insulating substrates compensated by deep levels // IEEE Trans. on Electronic Devices 41 (8), p. 1340-1346 (1994). https://doi.org/10.1109/16.297727
2. Z. Ouarchi, Caractérisation et modélisation des effets de pièges et thermiques des transistors à effet de champ sur As Ga; Application à la simulation de la dynamique lente des circuits micro-ondes, Thèse de doctorat de l'université de Limoges, N 9-99.
3. M. Nawaz, T.A. Feldly, A new charge conserving capacitance model for GaAs MESFET'S // IEEE Trans. on Electronic Devices 44 (11) (1997). https://doi.org/10.1109/16.641347
4. S. D'Agostino, A.B. Berruto, Physics based expressions for non-linear capacitances of MESFET equivalent circuit // IEEE Trans. on M.T.T. 42 (3), p. 403-406 (1994). https://doi.org/10.1109/22.277433
5. C. Kenzai, Y. Saidi, M. Zaabat, N. Merabtine, A new model predicting the dynamic behaviour of GaAs MESFET // Latvian J. Phys. and Technical Sci. N 4 (2003).
6. N. Merabtine, S. Amourache, Y. Saidi, M. Zaabat, C. Kenzai, New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET // Semiconductor Physics, Quantum Electronics and Optoelectronics 6 (3), p. 404-410 (2003). https://doi.org/10.15407/spqeo6.03.404