Abstract


Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 4. P. 022-025. https://doi.org/10.15407/spqeo8.04.022 Investigation of growing the Hg_{1−x−y−z}A_xB_yC_zTe solid solutions by a modified zone melting method I.N. Gorbatyuk , V.V. Zhikharevich, S.E. Ostapov Yuri Fed’kovich Chernivtsi National University, 2, Kotsyubinsky str., 58012 Chernivtsi, Ukraine Abstract. This paper presents research of the process for growing the crystals of semiconductor solid solutions Hg1−x−y−zAxByCzTe under conditions of a modified zone melting. Keywords: multicomponent solid solution, crystal growth. Full Text (PDF) Back to N4 Volume 8