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Semiconductor Physics,
  Quantum Electronics &
     Optoelectronics
     (SPQEO)

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)  |  ISSN 1606-1365 (CD)









 

Contents Volume 8 N 4

Unstable mixing regions in II-VI quaternary solid solutions
V.G. Deibuk, S.G. Dremlyuzhenko, S.E. Ostapov
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.4. P. 001-004.
Abstract | Full text (PDF)

Zn and Mn impurity effect on electron and luminescent properties of porous silicon
V.E. Primachenko, S.I. Kirillova, E.G. Manoilov, I.M. Kizyak, B.M. Bulakh, V.A. Chernobai, E.F. Venger
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.4. P. 005-013.
Abstract | Full text (PDF)

Some physical properties of Si1-xGex solid solutions using pseudo-alloy atom model
A.R. Jivani, H.J. Trivedi, P.N. Gajjar, A.R. Jani
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.4. P. 014-017.
Abstract | Full text (PDF)

Magnetic field effect on the binding energy of a hydrogenic impurity in GaAs-Ga1-xAlxAs superlattice
D. Abouelaoualim
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.4. P. 018-021.
Abstract | Full text (PDF)

Investigation of growing the Hg1-x-y-zAxByCzTe solid solutions by modified zone melting method
I.N. Gorbatyuk, V.V. Zhikharevich, S.E. Ostapov
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.4. P. 022-025.
Abstract | Full text (PDF)

Interband optical transitions in spherical nanoheterostructures
V.I. Boichuk, I.V. Bilynskyi, I.O. Shakleina
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.4. P. 026-032.
Abstract | Full text (PDF)

p-n junctions obtained in (Ge2)x(GaAs)1-x varizone solid solutions by liquid phase epitaxy
AUTHORS
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.4. P. 033-034.
Abstract | Full text (PDF)

The structure of glassy HgSGeS2
V.V. Halyan, H.Ye. Davydyuk, O.V. Parasyuk, A.H. Kevshyn
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.4. P. 035-037.
Abstract | Full text (PDF)

Electron states at the SiSiO2 boundary (Review)
V.E. Primachenko, S.I. Kirillova, V.A. Chernobai, E.F. Venger
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.4. P. 038-054.
Abstract | Full text (PDF)

Investigation of cadmium telluride films on silicon substrate
V.A. Odarych, A.Z. Sarsembaeva, F.F. Sizov, M.V. Vuichyk
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.4. P. 055-059.
Abstract | Full text (PDF)

Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al0.45Ga0.55As superlattice
D. Abouelaoualim
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.4. P. 060-064.
Abstract | Full text (PDF)

Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis
A.E. Belyaev, A.V. Bobyl, N.S. Boltovets, V.N. Ivanov, R.V. Konakova, S.G. Konnikov, Ya.Ya. Kudryk, E.P. Markovskiy, V.V. Milenin, E.M. Rudenko, G.F. Tereschenko, V.P. Ulin, V.M. Ustinov, G.E. Tsirlin, A.P. Shpak
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.4. P. 065-071.
Abstract | Full text (PDF)

Influence of polarization azimuth on twophoton absorption in CdS
N.R. Kulish, M.P. Lisitsa, N.I. Malysh
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.4. P. 072-073.
Abstract | Full text (PDF)

LC acousto-optical transducer for nondestructive holographic control systems
P. Oleksenko, V. Sorokin, P. Tytarenko, R. Zelinskyy
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.4. P. 074-079.
Abstract | Full text (PDF)

Conductance relaxation in Langmuir-Blodgett manganese phthalocyanine (PcMn) films in inhomogeneous electrical field
Z. Kazantseva, V. Kislyuk, I. Kozyarevych, V. Lozovski, O. Tretyak
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.4. P. 080-084.
Abstract | Full text (PDF)

Electron properties of semiconductor surface studied by the electroreflectance spectroscopy method
P.A. Gentsar, A.I. Vlasenko, A.A. Kudryavtsev
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.4. P. 085-090.
Abstract | Full text (PDF)

Analysis of fractal radiation patterns from concentric-ring hexagonal arrays
A. Boualleg, N. Merabtine, M. Benslama
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.4. P. 091-094.
Abstract | Full text (PDF)

Porous nanostructured InP: technology, properties, application
I. N. Arsentyev, A.B. Bobyl, S.G. Konnikov, I.S. Tarasov, V.P Ulin, M.V. Shishkov, N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, R.V. Konakova, Ya.Ya. Kudryk, A.B. Kamalov, P.M. Lytvyn, E.P. Markovskiy, V.V. Milenin, R.A. Redko
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.4. P. 095-104.
Abstract | Full text (PDF)

New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis
I.N. Arsentyev, A.V. Bobyl, I.S. Tarasov, M.V. Shishkov, N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, A.B. Kamalov, R.V. Konakova, Ya.Ya. Kudryk, O.S. Lytvyn, P.M. Lytvyn, E.P. Markovskiy, V.V. Milenin
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.4. P. 105-114.
Abstract | Full text (PDF)

Polymorphism in chalcogenides of alkalineearth metals
V.. Drozdov, V.V. Pozhivatenko, .. Drozdov, V.V. Kovalchuk, L.M. Moiseev, V.O. Moiseeva
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.4. P. 115-117.
Abstract | Full text (PDF)

Optical properties of p-type porous GaAs
V.V. Kidalov, L. Beji, G.A. Sukach
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.4. P. 118-120.
Abstract | Full text (PDF)