|
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 4. P. 026-032.
Interband optical transitions in spherical nanoheterostructures
Drohobych Ivan Franko State Pedagogical University
3, Stryiska str., 82100 Drohobych, Lviv Region, Ukraine,
e-mail:fizmat@drogobych.net
Abstract. A spherical semiconductor nanoheterostructure of cubic symmetry is studied
in the paper. Accurate solutions of the Schrödinger equation for S1/2, P1/2, P3/2, D5/2, and
D7/2 states of particles are found in the framework of the Luttinger-Baldereschi-Lipari
Hamiltonian and the finite value of the band disruption on the boundaries of the media is
ascertained. Specific calculations of the quantum dot radius dependence of the hole state
energy were performed for the GaSb/AlSb heterostructure. The obtained results were
compared to the data obtained using the infinite potential well model as well as the
model of simple bands for heavy and light holes. The electron energies and electron
wavefunctions were found within the isotropic effective mass model taking into account
a discontinuity of the conduction bandgap on the heterostructure boundary. Probabilities
of GaSb/AlSb heterosystem interband transitions were analyzed using the obtained
formulae.
Keywords: heterosystem, quantum dot, state energy.
| ||