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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 4. P. 033-034.
p-n junctions obtained in (Ge2)x(GaAs)1–x varizone
solid solutions by liquid phase epitaxy
Physical and Technical Institute of Uzbek Academy of Sciences,
2b, G. Mavlanov str.,700084 Tashkent, Republic of Uzbekistan
E-mail: bayram@physic.uzsci.net
Abstract. (Ge2)x(GaAs)1−x graded gap layers were grown using the method of liquid
phase epitaxy on GaAs substrates. Investigated are distributions of chemical components
along the thickness of the epitaxial layer. In accord to the scan patterns obtained in
characteristic X-rays, the layers have a perfect structure, and the component distributions
both along the thickness and the interface are rather monotonous, macroscopic defects
and metal inclusions are absent. In the epitaxial layers, we created p-n junctions by
diffusion of Zn from a gas phase. We studied the possibilities of using the GaAs-
(Ge2)x(GaAs)1−x structures as solar converters including the near infra-red region. In this
case, the GaAs substrate serves as a filter for light quanta with the energy hν < EgGaAs.
The conversion efficiency dependences on the gradient x and the p-n junction position
inside the (Ge2)x(GaAs)1−x graded gap layer are also shown.
Keywords: liquid phase epitaxy, solid solution, p-n junction.
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