Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 4. P. 055-059.
https://doi.org/10.15407/spqeo8.04.055

Investigation of cadmium telluride films on silicon substrate
V.A. Odarych1, A.Z. Sarsembaeva2, F.F. Sizov2, M.V. Vuichyk2

1 Taras Shevchenko Kyiv National University, Physics Department, 2, prospect Academician Glushkov, 03022 Kyiv, Ukraine, e-mail: wladodarych@narod.ru
2V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 45, prospect Nauky, 03028 Kyiv, Ukraine, phone: 5258472; e-mail: sannaz@bigmir.net

Abstract. Properties of cadmium telluride films on silicon substrate, distribution of thickness and refraction index over the sample area were investigated by the ellipsometric method. It was ascertained that the refraction index of cadmium telluride films on a silicon substrate was considerably less than that of monocrystalline CdTe and depends on the film thickness, increasing with the thickness growth.

Keywords: cadmium telluride films, ellipsometry, film thickness.

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