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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 4. P. 060-064.
Nonparabolicity effects on electron-confined LO-phonon scattering
rates in GaAs-Al0.45Ga0.55As superlattice
L.P.S.C.M, Physics Department, Faculty of Sciences - Semlalia,
BP:2390, 40000, Marrakech, Morocco
E-mail: abouelaoualim_d@hotmail.com
Abstract. We investigate theoretically the effect of nonparabolic band structure on the
electron-confined LO-phonon scattering rate in GaAs-Al0.45Ga0.55As superlattice. Using
the quantum treatment, the new wave function of electron miniband conduction of
superlattice and a reformulation of the slab model for the confined LO-phonon modes
has been considered. An expression for the scattering rates has been obtained. Our results
show that, for transitions related to the emission of confined LO-phonon, the scattering
rates are significantly increased in the band nonparabolicity case.
Keywords: scattering rate, band structure, nonparabolicity effect.
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