Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 4. P. 065-071.
https://doi.org/10.15407/spqeo8.04.065

Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis
A.E. Belyaev1, A.V. Bobyl2, N.S. Boltovets3, V.N. Ivanov3, R.V. Konakova1,S.G. Konnikov2, Ya.Ya. Kudryk1, E.P. Markovskiy1, V.V. Milenin1, E.M. Rudenko4,G.F.Tereschenko2, V.P. Ulin2, V.M. Ustinov2, G.E. Tsirlin2, A.P. Shpak4

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine
2 A.F. Ioffe Physico-Technical Institute, RAS, 26, Politekhnicheskaya str., 194021 St.-Petersburg, Russia
3State Scientific & Research Institute “Orion”, 8a, Eugene Pottier str., 03057 Kyiv, Ukraine
4G.V. Kurdyumov Institute of Metal Physics, NAS of Ukraine, 36, Akademika Vernadskogo Blvd., 03680 Kyiv, Ukraine

Abstract. The n+-n-n+-n++-GaAs epitaxial structures were MBE-grown on porous nanostructured and traditional (standard) heavily doped n++-GaAs substrates. On their basis, we fabricated the Gunn diodes generating power output in the 44−59 GHz (first harmonic) and 101−104 GHz (second harmonic) frequency ranges. For both harmonics, the power output of the Gunn diodes grown on porous substrates was shown to be from 20 to 30 % higher than those grown on the flat ones.

Keywords: porous n++-GaAs substrate, epitaxial structures, the Schottky barrier, the Gunn diode, ohmic contact.

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