Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 4. P. 080-084.
https://doi.org/10.15407/spqeo8.04.080

Conductance relaxation in Langmuir-Blodgett manganese phthalocyanine (PcMn) films in inhomogeneous electrical field
Z. Kazantseva1, V. Kislyuk2, I. Kozyarevych2, V. Lozovski1,2, O. Tretyak2

1Institute of Semiconductor Physics, NAS of Ukraine, 45, prospect Nauky, 03028 Kyiv, Ukraine; phone/fax: (+380) 44 5255530
2Taras Shevchenko Kyiv National University, Radiophysics Department, 2 build 5, prospect Academician Glushkov, 03022 Kyiv, Ukraine
Corresponding author: Igor Kozyarevych, e-mail: kio@univ.kiev.ua

Abstract. The conductance relaxation of Langmuir-Blodgett films of manganese phthalocyanine in inhomogeneous electrical field was studied. Inhomogeneous electrical field was achieved by using the lateral surface of reverse-biased Si p-n junction. The conductance of new film increases up to saturation with the characteristic time about 10 hours. After that the film has been kept in air for a long time (about 50 days), on application of the back bias the conductance slowly decreased with the characteristic time more than 10 hours. These properties are associated with appearance or disappearance of the bonds between molecular stacks in the film.

Keywords: manganese phthalocyanine, Langmuir-Blodgett film, conductance, molecular stacks, silicon p-n junction.

Full Text (PDF)

Back to N4 Volume 8