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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 4. P. 085-090.
Electron properties of semiconductor surface studied
by the electroreflectance spectroscopy method
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
45, prospect Nauky, 03028 Kyiv, Ukraine, e-mail: gentsar@isp.kiev.ua
Abstract. Relations between the Keldysh-Franz oscillations with electron parameters of
semiconductor materials were used to derive qualitative data for homoepitaxial films nGaAs (100) from their electroreflectance spectra. The spectra were measured using the
Shottky barrier method at the temperature 300 K and non-polarized light from the range
1.3-1.65 eV in vicinity of E0 transition (Г8v → Г6с). The spectral data enabled to get values
of the following electron parameters: the energy of the electron transition, electrooptical
energy, surface electric field, phenomenological parameter of widening, charge carrier
relaxation time by energy, relative phase factor, extension of the wave function
oscillation and the value of electron mobility. The obtained values are in a good
agreement with known data for structurally perfect n-GaAs with the electron
concentration n = 1017 – 1018 cm-3 .
Keywords: melectroreflectance, Keldysh-Franz effect, homoepitaxial film n-GaAs.
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