Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 4. P. 118-120.
https://doi.org/10.15407/spqeo8.04.118

Optical properties of p-type porous GaAs
V.V. Kidalov1, L. Beji2, G.A. Sukach3

1Berdyansk State Pedagogical University, 4, Shmidt str., 71100 Berdyansk, Ukraine phone: +38 (06153) 63373; e-mail: kid@bdpu.org,
2Laboratoire de Physique et de Chimie des Interfaces, Faculté des Sciences 5019 Monastir, Tunisia 3 Institute of Semiconductor Physics, NAS of Ukraine, 45, prospect Nauky 03028 Kyiv, Ukraine

Abstract. Samples of p-type porous GaAs was obtained by electrochemical anodization of (100) oriented p-type GaAs. The formation of porous structure has been confirmed by Raman spectroscopy and scanning electron microscopy investigations. The lowfrequency Raman shift of the peaks conditioned by the main optical phonons was observed in the Raman spectra of the porous GaAs. Estimation of the size of nanocryslallites in porous GaAs both by Raman shift and scanning electron microscopy gives approximately the same values and was about 10-20 nm. Photoluminescence investigations of porous GaAs exhibit the presence of two infrared and one visible bands.

Keywords: porous GaAs, quantum confinement, electrochemical etching, photoluminescence, scanning electron microscopy.

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