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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 4. P. 031-035.
Layered structure formation in Hg1−xCdxTe films after high-frequency sonication
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prospect Nauky, 03028 Kyiv, Ukraine
Phone:(044) 525-1813, fax: (044) 525 1810
Abstract. Electrophysical parameters of Hg1−xCdxTe thin films grown by liquid-phase
epitaxy and molecular-beam epitaxy were investigated before and after the highfrequency sonication ( fUS = 7.5 MHz, WUS ∼ 104 W/m2
). It was determined that
parameters of MBE-grown Hg1−xCdxTe thin films are stable to ultrasound effect, while
for thin films grown by LPE the sonically stimulated change of the conductivity type was
observed. The best agreement between experiment and calculation was obtained in the
frame of the assumption about forming of the thin layer with another conductivity type.
The possible nature of the observed effect was analyzed.
Keywords: Hg1−xCdxTe thin films, sonication.
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