Journal cover page

Semiconductor Physics,
  Quantum Electronics &
     Optoelectronics
     (SPQEO)

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)  |  ISSN 1606-1365 (CD)









 

Contents Volume 9 N 4

The theory of exciton states in quasi-zero-dimensional semiconductor systems
S.I. Pokutnyi
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.4. P. 001-006.
Abstract | Full text (PDF)

Polarizability of D+X complex in bulk semiconductors
M. Katih, J. Diouri and A. El Haddad
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.4. P. 007-011.
Abstract | Full text (PDF)

Confined LO phonon limited free carrier absorption in quantum well wires
G.B. Ibragimov , Derin Huseyin, Yaraneri Halil
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.4. P. 012-016.
Abstract | Full text (PDF)

Conductivity and photoconductivity peculiarities observed in C60 layers
St. Kanev, Z. Nenova, N. Koprinarov, K. Ivanova
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.4. P. 017-020.
Abstract | Full text (PDF)

Photoabsorption and photoconductivity in C60 layers
St. Kanev, Z. Nenova, N. Koprinarov
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.4. P. 021-025.
Abstract | Full text (PDF)

Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions
.V. Brodovoy, A.M. Veremenko, V.A. Skryshevsky, .V. Vlasyuk
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.4. P. 026-030.
Abstract | Full text (PDF)

Layer structure formation in Hg1-xCdxTe films after high-frequency sonication
R.K. Savkina, F.F. Sizov, A.B. Smirnov, V.V. Tetyorkin
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.4. P. 031-035.
Abstract | Full text (PDF)

Photoemission spectra of indium selenide
V.M. Katerynchuk, M.Z. Kovalyuk, M.V. Tovarnitskii
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.4. P. 036-039.
Abstract | Full text (PDF)

Cadmium phosphide as a new material for infrared converters
D. Stepanchikov, S. Shutov
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.4. P. 040-044.
Abstract | Full text (PDF)

Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells
O. Konoreva, V. Opilat, M. Pinkovska, V. Tartachnyk
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.4. P. 045-048.
Abstract | Full text (PDF)

Production of GaAs transistors with the Schottky barrier in Bi-GaAs-AsCl3-HCl-SnCl2-H2-He system
V.O. Voronin, S.K. Guba, I.V. Kurylo
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.4. P. 049-050.
Abstract | Full text (PDF)

A novel numerical approach for the modelling of the square shaped silicon membrane
Fouad Kerrour and Farida Hobar
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.4. P. 051-057.
Abstract | Full text (PDF)

Surface microrelief obtained by composed target deposition for LC molecules alignment
Yu. Kolomzarov, P. Oleksenko, V. Sorokin, P. Tytarenko, R. Zelinskyy
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.4. P. 058-062.
Abstract | Full text (PDF)

Thermodynamical length scales temperatures correlation for the Ginzburg-Landau theory
Z. Bousnane, N. Merabtine, M. Benslama, F. Bousaad
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.4. P. 063-064.
Abstract | Full text (PDF)

The logical closure limit of superconductivity descriptions
Z. Bousnane, N. Merabtine, M. Benslama, F. Boussaad
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.4. P. 065-066.
Abstract | Full text (PDF)

A silicon carbide thermistor
N.S. Boltovets, V.V. Kholevchuk, R.V. Konakova, Ya.Ya. Kudryk, P.M. Lytvyn, V.V. Milenin, V.F. Mitin, E.V. Mitin
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.4. P. 067-070.
Abstract | Full text (PDF)

Radar cross section study from wave scattering structures
S. Redadaa, A. Boualleg, N. Merabtine M. Benslama
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.4. P. 071-076.
Abstract | Full text (PDF)

Modelling vacancy microvoid formation in dislocation-free silicon single crystals
V.I. Talanin, I.E. Talanin, S.A. Koryagin, M.Yu. Semikina
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.4. P. 077-081.
Abstract | Full text (PDF)

Electric properties of TlInS2 single crystals
S.N. Mustafaeva, A.A. Ismailov, N.D. Akhmedzade
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.4. P. 082-084.
Abstract | Full text (PDF)

Kinoform syntesis as an improved method to form a concealed image in optical security devices
E.V. Braginets, V.I. Girnyk, S.A. Kostyukevych, V.N. Kurashov, A.A. Soroka
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.4. P. 085-090.
Abstract | Full text (PDF)