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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 4. P. 036-039.
Photoemission spectra of indium selenide
I. Frantsevich Institute for Problems of Material Science, NAS of Ukraine, Chernivtsi Department
5, Iryna Vilde str., 58001 Chernivtsi, Ukraine
Phone: (0372) 525155; fax: (03722) 36018; e-mail: chimsp@unicom.cv.ua
Abstract. For layered InSe crystals photoluminescence spectra were investigated and the
corresponding radiative transitions were analyzed. It was found that along with the bandto-band transitions the radiative ones with participation of impurity levels plays a substantial role in the light emission spectrum of the semiconductor. This fact is
confirmed by the intensities of the radiative bands for the impurity level – c(v)-band
transitions and the donor-acceptor recombination. The temperature dependences of the
spectrum in the range of 100 to 300 К have also enabled to ascertain the dynamics of
these radiative transitions. At the temperatures 180 to 300 К, the bands associated with
the indirect transitions involving indirect free excitons are more intensive. At
100…180 К, the intensity of the bands corresponding to the direct transitions with
participation of direct free excitons increases. We have determined the energies of the
observed photoluminescence bands, and the band diagram of the corresponding radiative
transitions in InSe has been built.
Keywords: InSe, layered crystal, photoluminescence, energy diagram.
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