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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 4. P. 040-044.
Cadmium phosphide as a new material for infrared converters
1Kherson National Technical University, Department of General and Applied Physics
24, Berislavskoye shosse, 73008 Kherson, Ukraine
E-mail: step_75@mail.ru; phone: +380(552) 326922
Abstract. Possible use of cadmium phosphide (Cd3P2) for infrared converter systems has
been debated. The interband absorption coefficient calculations has been executed for
single crystals of n-Cd3P2 and interpreted in the exact generalized Kildal band model.
Relationship between the absorption coefficient and radiation temperature is presented.
On the ground of our calculations, the theoretical temperature dependences of the
maximum values of photovoltage and efficiency have been obtained. A common thermodynamical approach was applied in this case. The source of radiation was a black body.
In our investigations, the barrier structure on metal-semiconductor basis with the
Schottky layer has been considered. The operation temperature range for the Me–n-Cd3P2
converter has been found.
Keywords: Incadmium phosphide, interband absorption, infrared converter.
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