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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 4. P. 058-062.
Surface microrelief obtained by composed target deposition for LC molecules alignment
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prospect Nauky, 03028 Kyiv, Ukraine
Abstract. Technology of SiOx:In,Sn aligning films deposited by the cathode reactive
sputtering (CRS) method is presented. The influence of In, Sn alloy surface concentration
in Si cathode target on aligning film properties are investigated by the AFM and optical
profilometry methods. The properties of aligning microrelief obtained by CRS method
for various In, Sn concentration and by the polyimide rubbing method are compared. It
was shown that such aligning microrelief can create defectless and perfect at the
microscopic level nematic LC oriented structures.
Keywords: reactive cathode sputtering, aligning films, nematic liquid crystal,
microrelief, AFM.
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