|
Semiconductor Physics, Quantum Electronics and Optoelectronics, 9 (4) P. 067-070 (2006).
References
| 1. O.A. Agueev, The technological problems of contacts to silicon carbide, TRTU Publishers, Taganrog, 2005 (in Russian). | | | | 2. S.P. Avdeev, O.A. Agueev, R.V. Konakova, Ya.Ya. Kudryk, O.S. Lytvyn, V.V. Milenin, D.A. Sechenov, A.M. Svetlichnyi, Modification of the parameters of metal-silicon carbide contacts using pulsed thermal treatment // Fizika i khimiya obrabotki materialov No 6, p. 84-88, 2004 (in Russian). | | | | 3. V.S. Fomenko, Emission properties of materials(Handbook). Naukova Dumka, Kiev, 1981 (in Russian). | | | | 4. S.P. Murarka, Silicides for VLSI Application. Academic Press, New YorkâLondon, 1983. | | | | 5. F. Roccaforte, Processes for SiC devices: new trends in metallization, in 5th European Conf. on Silicon Carbide and Related Materials (ECSCRM 2004)Tutorial, v.1, Bologna, Italia. | | |
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