References

Semiconductor Physics, Quantum Electronics and Optoelectronics, 9 (4) P. 077-081 (2006).

References

1. T. Sinno, R.A. Brown, W. von Ammon and E. Dornberger, Point defects dynamics and the oxidation-induced stacking-faults in Czochralski-grown silicon crystals // J. Electrochem. Soc. 145(1), p. 302-318 (1998). https://doi.org/10.1149/1.1838251

2. M.S. Kulkarni, V. Voronkov and R. Falster, Quantification of defect dynamics in unsteady-state and steady-state Czochralski growth of mono-crystalline silicon // J. Electrochem. Soc.151(5), p. G663-G669 (2004). https://doi.org/10.1149/1.1785792

3. V.V. Voronkov, Mechanism of swirl defects formation in silicon // J. Cryst. Growth 59 (3), p. 625-642 (1982). https://doi.org/10.1016/0022-0248(82)90386-4

4. V.I. Talanin and I.E. Talanin, Mechanism of formation and physical classification of the grown in microdefects in semiconductor silicon // Defect & Diffusion Forum230-232(1), p. 177-198 (2004). https://doi.org/10.4028/www.scientific.net/DDF.230-232.177

5. V.I. Talanin and I.E. Talanin, Formation of grown-in microdefects in dislocation-free silicon monocrystals, In: New research on semiconductors, Ed. T.B. Elliot, p. 35-59. Nova Sci. Publ., New York, 2006.

6. T. Ueki, M. Itsumi, T. Takeda, K. Yoshida, A. Takaoka and S. Nakajima, Shrinkage of grown-in defects in Czochralski silicon during thermal annealing in vacuum // Jpn J. Appl. Phys. 37 (7), p. L771-L773 (1998). https://doi.org/10.1143/JJAP.37.L771

7. Y. Yanase, H. Nishihata, T. Ochiai, H. Tsuya, Atomic force microscope observation of the change in shape and subsequent disappearance of "crystal-originated particles" after hydrogen-atmosphere thermal annealing // Jpn J. Appl. Phys.37 (1), p. 1-4 (1998). https://doi.org/10.1143/JJAP.37.1

8. M. Itsumi, Octahedral void defects in Czochralski silicon // J. Cryst. Growth 237-239(3), p. 1773-1778 (2002). https://doi.org/10.1016/S0022-0248(01)02337-5

9. V.I. Fistul, V.I. Petrovskii, N.S. Rytova and P.M. Grinshtein, Formation of nearsurface impurity profile // Fizika i Technika Poluprovodnikov 13(11), p. 1402-1410 (1979) (in Russian).

10. V.I. Fistul and M.I. Sinder // Fizika i Technika Poluprovodnikov 15(6), p. 1182-1186 (1981) (in Russian).

11. M. Akatsuka, M. Okui, S. Umeno and K. Sueoka, Calculation of size distribution of void defects in CZ silicon // J. Electrochem. Soc.150 (9), p. G587-G590 (2003). https://doi.org/10.1149/1.1599854

12. V.I. Talanin and I.E. Talanin, Recombination parameters of point defects in dislocation-free silicon single crystals // Functional Materials 13 (1), p. 1-5 (2006).